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absolute maximum ratings parameter units i d @v gs = 4.5v,t c = 25c continuous drain current 22* i d @v gs = 4.5v,t c = 100c continuous drain current 20 i dm pulsed drain current 88 p d @ t c = 25c max. power dissipation 57 w linear derating factor 0.45 w/c v gs gate-to-source voltage 10 v e as single pulse avalanche energy 63 mj i ar avalanche current 22 a e ar repetitive avalanche energy 5.7 mj dv/dt peak diode recovery dv/dt 8.8 v/ns t j operating junction -55 to 150 t stg storage temperature range pckg. mounting surface temp. 300 (for 5s) weight 1.0 (typical) g pre-irradiation c a radiation hardened irhlnj77034logic level power mosfet surface mount (smd-0.5) www.irf.com 1 60v, n-channel technology for footnotes refer to the last page smd-0.5 features: 5v cmos and ttl compatible fast switching single event effect (see) hardened low total gate charge simple drive requirements ease of paralleling hermetically sealed ceramic package surface mount light weight

2n7606u3 international rectifiers r7 tm logic level power mosfets provide simple solution to interfacing cmos and ttl controlcircuits to power devices in space and other radiation environments.the threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation.this is achieved while maintaining single event gate rupture and single event burnout immunity. the device is ideal when used to interface directly with most logic gates, linear ics, micro-controllers, and other device types that operate from a 3.3-5v source. it may also be used to increase the output current of a pwm, voltage comparator or an operational amplifier where the logic level drive signal is available. product summary part number radiation level r ds(on) i d irhlnj77034 100k rads (si) 0.035 ? 22a* irhlnj73034 300k rads (si) 0.035 ? 22a* pd-97301b downloaded from: http:///
irhlnj77034, 2n7606u3 pre-irradiation 2 www.irf.com for footnotes refer to the last page source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) 22* i sm pulse source current (body diode) 88 v sd diode forward voltage 1.2 v t j = 25c, i s = 22a, v gs = 0v t rr reverse recovery time 160 ns t j = 25c, i f = 22a, di/dt 100a/ s q rr reverse recovery charge 704 nc v dd 25v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a note: corresponding spice and saber models are available on international rectifier web site. electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage 60 v v gs = 0v, i d = 250 a ? bv dss / ? t j temperature coefficient of breakdown 0.068 v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state 0.035 ? v gs = 4.5v, i d = 20a resistance v gs(th) gate threshold voltage 1.0 2.0 v v ds = v gs , i d = 250 a ? v gs(th) / ? t j gate threshold voltage coefficient -4.9 mv/c g fs forward transconductance 15 s v ds = 10v, i ds = 20a i dss zero gate voltage drain current 1.0 v ds = 48v ,v gs =0v 1 0 v ds = 48v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward 100 v gs = 10v i gss gate-to-source leakage reverse -100 v gs = -10v q g total gate charge 34 v gs = 4.5v, i d = 22a q gs gate-to-source charge 8.0 nc v ds = 30v q gd gate-to-drain (miller) charge 16 t d (on) turn-on delay time 26 v dd = 30v, i d = 22a, t r rise time 110 v gs = 5.0v, r g = 7.5 ? t d (off) turn-off delay time 54 t f fall time 30 l s + l d total inductance 4.0 ciss input capacitance 2015 v gs = 0v, v ds = 25v c oss output capacitance 488 p f f = 1.0mhz c rss reverse transfer capacitance 4.5 na nh ns a measured from the center of drain pad to center of source pad

r g gate resistance 1.45 ? f = 1.0mhz, open drain thermal resistance parameter min typ max units test conditions r thjc junction-to-case 2.2 c/w downloaded from: http:///
www.irf.com 3 pre-irradiation irhlnj77034, 2n7606u3 international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and testconditions in order to provide a direct comparison. radiation characteristics international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. fig a. typical single event effect, safe operating area for footnotes refer to the last page table 1. electrical characteristics @ tj = 25c, post total dose irradiation parameter upto 300k rads (si) 1 units test conditions min max bv dss drain-to-source breakdown voltage 60 v v gs = 0v, i d = 250a v gs(th) gate threshold voltage 1.0 2.0 v gs = v ds , i d = 250a i gss gate-to-source leakage forward 100 na v gs = 10v i gss gate-to-source leakage reverse -100 v gs = -10v i dss zero gate voltage drain current 1.0 a v ds = 48v, v gs =0v r ds(on) static drain-to-source on-state resistance (to-3) 0.045 ? v gs = 4.5v, i d = 20a r ds(on) static drain-to-source on-state v sd diode forward voltage 1.2 v v gs = 0v, i d = 22a resistance (smd-0.5) 0.035 ? v gs = 4.5v, i d = 20a 1. part numbers irhlnj77034, irhlnj73034 -70-60 -50 -40 -30 -20 -10 0 01234567 bias vgs (v) bias vds (v) let=38 5% let=62 5% let=85 5% table 2. typical single event effect safe operating area let ener gy ran g ev d s ( v ) ( mev/ ( m g /cm 2 )) ( mev ) ( m ) @vgs= @vgs= @vgs= @vgs= @vgs= @vgs= 0v -2v -4v -5v -6v -7v 38 5% 300 7.5% 38 7.5% 60 60 60 60 60 - 62 5% 355 7.5% 33 7.5% 60 60 60 60 - - 85 5% 380 7.5% 29 7.5% 60 60 60 - - - downloaded from: http:///
irhlnj77034, 2n7606u3 pre-irradiation 4 www.irf.com normalized on-resistance vs. temperature typical output characteristics typical output characteristics typical transfer characteristics 15 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 150c 2.3v vgs top 10v 5.0v 4.5v 4.0v 3.5v 3.0v 2.50v bottom 2.30v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width, tj = 25c vgs top 10v 5.0v 4.5v 4.0v 3.5v 3.0v 2.50v bottom 2.30v 2.30v -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.0 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) v gs = 4.5v i d = 22a 22 . 533 . 544 . 55 v gs , gate-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) v ds = 25v 6 0 s pulse width t j = 150c t j = 25c downloaded from: http:///
www.irf.com 5 pre-irradiation irhlnj77034, 2n7606u3 fig 7. typical drain-to-source breakdown voltage vs temperature fig 8. typical threshold voltage vs temperature fig 5. typical on-resistance vs gate voltage fig 6. typical on-resistance vs drain current -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , temperature ( c ) 60 70 80 90 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e ( v ) i d = 1.0ma 0 10 20 30 40 50 60 70 80 i d , drain current (a) 10 20 30 40 50 60 70 80 90 100 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) t j = 25c t j = 150c vgs = 4.5v 2 4 6 8 10 12 v gs, gate -to -source voltage (v) 0 10 20 30 40 50 60 70 80 90 100 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 22a t j = 25c t j = 150c -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , temperature ( c ) 0.0 0.5 1.0 1.5 2.0 2.5 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 50a i d = 250a i d = 1.0ma i d = 150ma downloaded from: http:///
irhlnj77034, 2n7606u3 pre-irradiation 6 www.irf.com typical source-to-drain diode forward voltage
typical gate charge vs. gate-to-source voltage typical capacitance vs. drain-to-source voltage maximum drain current vs. case temperature 1 10 100 v ds , drain-to-source voltage (v) 0 400 800 1200 1600 2000 2400 2800 3200 3600 4000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 v sd , source-to-drain voltage (v) 0.01 0.1 1 10 100 i s d , r e v e r s e d r a i n c u r r e n t ( a ) v gs = 0v t j = 150c t j = 2 5 c 25 50 75 100 125 150 t c , case temperature (c) 0 5 10 15 20 25 30 35 i d , d r a i n c u r r e n t ( a ) limited by package 0 5 10 15 20 25 30 35 40 45 50 55 60 q g, total gate charge (nc) 0 2 4 6 8 10 12 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 48v v ds = 30v v ds = 12v i d = 22a for test circuit see figure 17 downloaded from: http:///
www.irf.com 7 pre-irradiation irhlnj77034, 2n7606u3 fig 14. maximum avalanche energy vs. drain current fig 15. maximum effective transient thermal impedance, junction-to-case maximum safe operating area 25 50 75 100 125 150 starting t j , junction temperature (c) 0 20 40 60 80 100 120 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 9.8a 13.9a bottom 22a 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc p t t dm 1 2 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1ms 10ms operation in this area limited by r ds (on) 100 s dc downloaded from: http:///
irhlnj77034, 2n7606u3 pre-irradiation 8 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 17b. gate charge test circuit fig 17a. basic gate charge waveform v ds 90%10% v gs t d(on) t r t d(off) t f fig 16a. unclamped inductive test circuit fig 16b. unclamped inductive waveforms t p v (br)dss i as fig 18a. switching time test circuit fig 18b. switching time waveforms r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs
1

0.1 % + - downloaded from: http:///
www.irf.com 9 pre-irradiation irhlnj77034, 2n7606u3 pulse width 300 s; duty cycle 2% total dose irradiation with v gs bias. 10 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. total dose irradiation with v ds bias. 48 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. repetitive rating; pulse width limited by maximum junction temperature. v dd = 25v, starting t j = 25c, l= 0.26mh peak i l = 22a, v gs = 10v i sd 22a, di/dt 328a/ s, v dd 60v, t j 150c footnotes: ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 12/2010 case outline and dimensions smd-0.5 1 = drain 2 = gate 3 = source pad assignments downloaded from: http:///

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